Chapter 2: Getting Started
2–5
Creating the Amplitude Modulation Model
Add the Sine Wave Block
To add the Sine Wave block, follow these steps:
1. In the Simulink Library Browser, click Simulink and Sources to view the blocks in
the Sources library.
2. Drag and drop a Sine Wave block into your model.
3. Double-click the Sine Wave block in your model to display the Block Parameters
dialog box ( Figure 2–3 ).
Figure 2–3. 500-kHz, 16-Bit Sine Wave Specified in the Sine Wave Dialog Box
4. Set the Sine Wave block parameters ( Table 2–1 ).
Table 2–1. Parameters for the Sine Wave Block
Parameter
Sine type
Time
Amplitude
Bias
Samples per period
Number of offset examples
Sample time
Interpret vector parameters a 1-D
Value
Sample based
simulation time
2^15–1
0
80
0
25e-9
On
November 2013
Altera Corporation
DSP Builder Handbook
Volume 2: DSP Builder Standard Blockset
相关PDF资料
IR11662SPBF IC CNTROL SMART RECTIFIER 8-SOIC
IR1166STRPBF IC MOSFET DRIVER N-CH 200V 8SOIC
IR11672ASPBF IC MOSFET DRIVER 200V 8-SOIC
IR1167ASTRPBF IC SMART SECONDARY DRIVER 8-SOIC
IR11682STRPBF IC MOSFET DRIVER DUAL 200V 8SOIC
IR1168SPBF IC MOSFET DRIVER DUAL 200V 8SOIC
IR1176STR IC DRIVER RECT SYNC 5V 4A 20SSOP
IR2010SPBF IC DRIVER HIGH/LOW SIDE 16SOIC
相关代理商/技术参数
IP-TRIETHERNET 功能描述:开发软件 Triple Spd Ethernet MegaCore RoHS:否 制造商:Atollic Inc. 产品:Compilers/Debuggers 用于:ARM7, ARM9, Cortex-A, Cortex-M, Cortex-R Processors
IP-TRIETHERNETF 功能描述:开发软件 3x Spd Ethernet MAC MegaCore RoHS:否 制造商:Atollic Inc. 产品:Compilers/Debuggers 用于:ARM7, ARM9, Cortex-A, Cortex-M, Cortex-R Processors
IPTV-OPTION-INS970 制造商:3M Electronic Products Division 功能描述:IPTV OPTION FOR INS970
IPU039N03L G 功能描述:MOSFET N-CH 30V 50A 3.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPU039N03LG 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS?3 Power-Transistor Features Fast switching MOSFET for SMPS
IPU039N03LGXK 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251
IPU04N03LA 功能描述:MOSFET N-CH 25V 50A IPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IPU04N03LA G 功能描述:MOSFET N-CH 25V 50A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件